WVM7N12 MOSFET Transistor

The WVM7N12 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WVM7N12 transistor as follows.

WVM7N12 Transistor Specification

Transistor Code		WVM7N12
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	120V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.5Ohm
Power Dissipation (Maximum)	PD	100W
Operating Junction Temperature (Maximum)		150°C
Rise Time		180*nS
Gate-Threshold Voltage (Maximum)		1.5V

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