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WVM13N50 MOSFET Transistor

The WVM13N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WVM13N50 transistor as follows.

Circuit diagram symbol of the WVM13N50 transistor

WVM13N50 Transistor Specification

Transistor Code WVM13N50
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.4Ohm
Power Dissipation (Maximum) PD 125W
Operating Junction Temperature (Maximum) 150°C
Rise Time 66*nS
Gate-Threshold Voltage (Maximum) 4V

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