WPM3012 MOSFET Transistor

The WPM3012 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WPM3012 transistor as follows.

WPM3012 Transistor Specification

Transistor Code		WPM3012
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23
Transistor SMD Code		W32*
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.068Ohm
Power Dissipation (Maximum)	PD	0.8W
Drain-Source Capacitance		67pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		1.55nC

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