WPM2005B MOSFET Transistor

The WPM2005B is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WPM2005B transistor as follows.

WPM2005B Transistor Specification

Transistor Code		WPM2005B
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN3X2-8L
Transistor SMD Code		J*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	1.1W

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