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WFW20N60W MOSFET Transistor

The WFW20N60W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WFW20N60W transistor as follows.

Circuit diagram symbol of the WFW20N60W transistor

WFW20N60W Transistor Specification

Transistor Code WFW20N60W
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.39Ohm
Power Dissipation (Maximum) PD 300W
Drain-Source Capacitance 420pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 45nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 150nC

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