VN10LE MOSFET Transistor

The VN10LE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the VN10LE transistor as follows.

VN10LE Transistor Specification

Transistor Code		VN10LE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-52
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.38A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5Ohm
Power Dissipation (Maximum)	PD	0.8W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10*nS
Gate-Threshold Voltage (Maximum)		2.5V

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