UTD413 MOSFET Transistor

The UTD413 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the UTD413 transistor as follows.

UTD413 Transistor Specification

Transistor Code		UTD413
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-251_TO-252
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.036Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		143pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12.2nS

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