TSM8N50CH MOSFET Transistor

The TSM8N50CH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM8N50CH transistor as follows.

TSM8N50CH Transistor Specification

Transistor Code		TSM8N50CH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.85Ohm
Power Dissipation (Maximum)	PD	89W
Drain-Source Capacitance		127.4pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.8nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		26.6nC

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