TSM1NB60CP MOSFET Transistor

The TSM1NB60CP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM1NB60CP transistor as follows.

TSM1NB60CP Transistor Specification

Transistor Code		TSM1NB60CP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	10Ohm
Power Dissipation (Maximum)	PD	39W
Drain-Source Capacitance		17.1pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.8nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		6.1nC

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