TSM1N80SCT MOSFET Transistor

The TSM1N80SCT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM1N80SCT transistor as follows.

TSM1N80SCT Transistor Specification

Transistor Code		TSM1N80SCT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-92
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	21.6Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		20pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		5nC

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