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TPCM8006 MOSFET Transistor

The TPCM8006 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPCM8006 transistor as follows.

Circuit diagram symbol of the TPCM8006 transistor

TPCM8006 Transistor Specification

Transistor Code TPCM8006
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSSOP_ADVANCE
Transistor SMD Code M8006
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 25A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.007Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 380pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS

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