TMD5N60Z MOSFET Transistor

The TMD5N60Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMD5N60Z transistor as follows.

TMD5N60Z Transistor Specification

Transistor Code		TMD5N60Z
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.1Ohm
Power Dissipation (Maximum)	PD	98.4W
Drain-Source Capacitance		69pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		18nC

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