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TK10A60W MOSFET Transistor

The TK10A60W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK10A60W transistor as follows.

Circuit diagram symbol of the TK10A60W transistor

TK10A60W Transistor Specification

Transistor Code TK10A60W
Transistor Type MOSFET
Control Channel Type N-Channel
Package SC-67
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.38Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 20pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 22nS
Gate-Threshold Voltage (Maximum) 3.7V

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