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STY34NB50 MOSFET Transistor

The STY34NB50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STY34NB50 transistor as follows.

Circuit diagram symbol of the STY34NB50 transistor

STY34NB50 Transistor Specification

Transistor Code STY34NB50
Transistor Type MOSFET
Control Channel Type N-Channel
Package MAX247
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 34A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.13Ohm
Power Dissipation (Maximum) PD 450W
Drain-Source Capacitance 950pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 32nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 159nC

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