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STU6N65M2 MOSFET Transistor

The STU6N65M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STU6N65M2 transistor as follows.

Circuit diagram symbol of the STU6N65M2 transistor

STU6N65M2 Transistor Specification

Transistor Code STU6N65M2
Transistor Type MOSFET
Control Channel Type N-Channel
Package IPAK
Transistor SMD Code 6N65M2
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.35Ohm
Power Dissipation (Maximum) PD 60W
Drain-Source Capacitance 12.8pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 9.8nC

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