STU6N65K3 MOSFET Transistor

The STU6N65K3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STU6N65K3 transistor as follows.

STU6N65K3 Transistor Specification

Transistor Code		STU6N65K3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		IPAK
Transistor SMD Code		6N65K3
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.3Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		65pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		33nC

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