STQ1HNK60R MOSFET Transistor

The STQ1HNK60R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STQ1HNK60R transistor as follows.

STQ1HNK60R Transistor Specification

Transistor Code		STQ1HNK60R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	0.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	8.5Ohm
Power Dissipation (Maximum)	PD	3W

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