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STP8NM60D MOSFET Transistor

The STP8NM60D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP8NM60D transistor as follows.

Circuit diagram symbol of the STP8NM60D transistor

STP8NM60D Transistor Specification

Transistor Code STP8NM60D
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Transistor SMD Code P8NM60D
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 1Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 170pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 15nC

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