STL60N10F7 MOSFET Transistor

The STL60N10F7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STL60N10F7 transistor as follows.

STL60N10F7 Transistor Specification

Transistor Code		STL60N10F7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWERFLAT5X6
Transistor SMD Code		60N10F7
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		360pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		25nC

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