STI11NM80 MOSFET Transistor

The STI11NM80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STI11NM80 transistor as follows.

STI11NM80 Transistor Specification

Transistor Code		STI11NM80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Transistor SMD Code		I11NM80
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.4Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		750pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		43.6nC

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