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STI11NM60ND MOSFET Transistor

The STI11NM60ND is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STI11NM60ND transistor as follows.

Circuit diagram symbol of the STI11NM60ND transistor

STI11NM60ND Transistor Specification

Transistor Code STI11NM60ND
Transistor Type MOSFET
Control Channel Type N-Channel
Package I2PAK
Transistor SMD Code 11NM60ND
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.45Ohm
Power Dissipation (Maximum) PD 90W
Drain-Source Capacitance 44pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 30nC

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