STH80N10F7-2 MOSFET Transistor

The STH80N10F7-2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH80N10F7-2 transistor as follows.

STH80N10F7-2 Transistor Specification

Transistor Code		STH80N10F7-2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		H2PAK-2
Transistor SMD Code		80N10F7
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		700pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		32nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		45nC

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