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STH12NA60 MOSFET Transistor

The STH12NA60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH12NA60 transistor as follows.

Circuit diagram symbol of the STH12NA60 transistor

STH12NA60 Transistor Specification

Transistor Code STH12NA60
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO218
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 6.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.6Ohm
Power Dissipation (Maximum) PD 190W
Drain-Source Capacitance 3250pF
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 110nC

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