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STD8N10-1 MOSFET Transistor

The STD8N10-1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD8N10-1 transistor as follows.

Circuit diagram symbol of the STD8N10-1 transistor

STD8N10-1 Transistor Specification

Transistor Code STD8N10-1
Transistor Type MOSFET
Control Channel Type N-Channel
Package IPAK
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.3Ohm
Power Dissipation (Maximum) PD 45W
Drain-Source Capacitance 450pF
Operating Junction Temperature (Maximum) 175°C

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