STB9NK60ZDT4 MOSFET Transistor

The STB9NK60ZDT4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB9NK60ZDT4 transistor as follows.

STB9NK60ZDT4 Transistor Specification

Transistor Code		STB9NK60ZDT4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		B9NK60ZD
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.95Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		135pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13.6nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		41nC

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