STB80NF06 MOSFET Transistor

The STB80NF06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB80NF06 transistor as follows.

STB80NF06 Transistor Specification

Transistor Code		STB80NF06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		P80NF06
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		800pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		85nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		115nC

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