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STB33N65M2 MOSFET Transistor

The STB33N65M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB33N65M2 transistor as follows.

Circuit diagram symbol of the STB33N65M2 transistor

STB33N65M2 Transistor Specification

Transistor Code STB33N65M2
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK
Transistor SMD Code 33N65M2
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 24A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.14Ohm
Power Dissipation (Maximum) PD 190W
Drain-Source Capacitance 75pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11.5nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 41.5nC

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