STB32NM50N MOSFET Transistor

The STB32NM50N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB32NM50N transistor as follows.

STB32NM50N Transistor Specification

Transistor Code		STB32NM50N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		32NM50N
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.13Ohm
Power Dissipation (Maximum)	PD	190W
Drain-Source Capacitance		179pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.5nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		62.5nC

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