STB18NM60ND MOSFET Transistor

The STB18NM60ND is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB18NM60ND transistor as follows.

STB18NM60ND Transistor Specification

Transistor Code		STB18NM60ND
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		18NM60ND
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.29Ohm
Power Dissipation (Maximum)	PD	130W
Drain-Source Capacitance		30pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15.5nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		34nC

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