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SSM5G10TU MOSFET Transistor

The SSM5G10TU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM5G10TU transistor as follows.

Circuit diagram symbol of the SSM5G10TU transistor

SSM5G10TU Transistor Specification

Transistor Code SSM5G10TU
Transistor Type MOSFET
Control Channel Type P-Channel
Package 2-2R1A
Transistor SMD Code KET
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 1.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.213Ohm
Power Dissipation (Maximum) PD 0.5W
Drain-Source Capacitance 43pF
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 6.4nC

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