The SSM5G10TU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the SSM5G10TU transistor as follows.
Transistor Code | SSM5G10TU | |
---|---|---|
Transistor Type | MOSFET | |
Control Channel Type | P-Channel | |
Package | 2-2R1A | |
Transistor SMD Code | KET | |
Drain-Source Voltage (Maximum) | VDS | 20V |
Gate-Source Voltage (Maximum) | VGS | 8V |
Drain Current (Maximum) | ID | 1.5A |
Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.213Ohm |
Power Dissipation (Maximum) | PD | 0.5W |
Drain-Source Capacitance | 43pF | |
Operating Junction Temperature (Maximum) | 150°C | |
Gate-Threshold Voltage (Maximum) | 1V | |
Total Gate Charge | 6.4nC |
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