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SSM4501GSD MOSFET Transistor

The SSM4501GSD is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM4501GSD transistor as follows.

Circuit diagram symbol of the SSM4501GSD transistor

SSM4501GSD Transistor Specification

Transistor Code SSM4501GSD
Transistor Type MOSFET
Control Channel Type NP-Channel
Package PDIP-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.027Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 150pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 5nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 9nC

SSM4501GSD MOSFET Transistor Overview

Key Electrical Characteristics of the SSM4501GSD MOSFET

Followings are the key electrical characteristics of the SSM4501GSD MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in SSM4501GSD MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the SSM4501GSD MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the SSM4501GSD MOSFET transistor is 7A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of SSM4501GSD MOSFET transistor when the transistor is fully turned on is 0.027 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the SSM4501GSD MOSFET transistor can comfortably transfer into heat without breaking is 2W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the SSM4501GSD MOSFET transistor is 150pF. This value influences to the switching speed of the SSM4501GSD MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the SSM4501GSD MOSFET transistor is switched on is 5nS. This is the rate at which SSM4501GSD MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SSM4501GSD MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of SSM4501GSD MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the SSM4501GSD MOSFET transistor. You can download the official SSM4501GSD MOSFET transistor datasheet to get more infromation about this transistor.

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