AP9960GD MOSFET Transistor

The AP9960GD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9960GD transistor as follows.

AP9960GD Transistor Specification

Transistor Code		AP9960GD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDIP-8
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		235pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.3nS

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