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SSM2030SD MOSFET Transistor

The SSM2030SD is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM2030SD transistor as follows.

Circuit diagram symbol of the SSM2030SD transistor

SSM2030SD Transistor Specification

Transistor Code SSM2030SD
Transistor Type MOSFET
Control Channel Type NP-Channel
Package PDIP-8
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 2.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.06Ohm
Power Dissipation (Maximum) PD 0.625W
Drain-Source Capacitance 255pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14nS
Gate-Threshold Voltage (Maximum) 1.2V
Total Gate Charge 9nC

SSM2030SD MOSFET Transistor Overview

Key Electrical Characteristics of the SSM2030SD MOSFET

Followings are the key electrical characteristics of the SSM2030SD MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in SSM2030SD MOSFET transistor is 20V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the SSM2030SD MOSFET transistor is 12V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the SSM2030SD MOSFET transistor is 2.6A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of SSM2030SD MOSFET transistor when the transistor is fully turned on is 0.06 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the SSM2030SD MOSFET transistor can comfortably transfer into heat without breaking is 0.625W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the SSM2030SD MOSFET transistor is 255pF. This value influences to the switching speed of the SSM2030SD MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the SSM2030SD MOSFET transistor is switched on is 14nS. This is the rate at which SSM2030SD MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SSM2030SD MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of SSM2030SD MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the SSM2030SD MOSFET transistor. You can download the official SSM2030SD MOSFET transistor datasheet to get more infromation about this transistor.

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