SSF3612E MOSFET Transistor

The SSF3612E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSF3612E transistor as follows.

SSF3612E Transistor Specification

Transistor Code		SSF3612E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		291pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4.42nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		10.3nC

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