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SSF2316E MOSFET Transistor

The SSF2316E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSF2316E transistor as follows.

Circuit diagram symbol of the SSF2316E transistor

SSF2316E Transistor Specification

Transistor Code SSF2316E
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN3X3-8L
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.023Ohm
Power Dissipation (Maximum) PD 1.4W
Drain-Source Capacitance 350pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 100nS

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