SSF10N60F MOSFET Transistor

The SSF10N60F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSF10N60F transistor as follows.

SSF10N60F Transistor Specification

Transistor Code		SSF10N60F
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	156W
Drain-Source Capacitance		137pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		36.4nS

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