SRM10N60TF MOSFET Transistor

The SRM10N60TF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SRM10N60TF transistor as follows.

SRM10N60TF Transistor Specification

Transistor Code		SRM10N60TF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.77Ohm
Power Dissipation (Maximum)	PD	27W
Drain-Source Capacitance		168pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4.29V

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