SRC11N65TF MOSFET Transistor

The SRC11N65TF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SRC11N65TF transistor as follows.

SRC11N65TF Transistor Specification

Transistor Code		SRC11N65TF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	700V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.348Ohm
Power Dissipation (Maximum)	PD	33.8W
Drain-Source Capacitance		782pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14.1nS
Gate-Threshold Voltage (Maximum)		4.9V
Total Gate Charge		27.8nC

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