SQ3418EV MOSFET Transistor

The SQ3418EV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ3418EV transistor as follows.

SQ3418EV Transistor Specification

Transistor Code		SQ3418EV
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSOP- 6
Transistor SMD Code		8P
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		81pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		8.5nC

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