SML802R8BN MOSFET Transistor

The SML802R8BN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML802R8BN transistor as follows.

SML802R8BN Transistor Specification

Transistor Code		SML802R8BN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	800V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.8Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		950pF
Operating Junction Temperature (Maximum)		150°C

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