SML501R1GN MOSFET Transistor

The SML501R1GN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML501R1GN transistor as follows.

SML501R1GN Transistor Specification

Transistor Code		SML501R1GN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO257
Drain-Source Voltage (Maximum)	VDS	500V
Drain Current (Maximum)	ID	6.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.1Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		950pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		55nC

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