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SIHL640S MOSFET Transistor

The SIHL640S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHL640S transistor as follows.

Circuit diagram symbol of the SIHL640S transistor

SIHL640S Transistor Specification

Transistor Code SIHL640S
Transistor Type MOSFET
Control Channel Type N-Channel
Package SMD-220
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 17A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.18Ohm
Power Dissipation (Maximum) PD 74W
Drain-Source Capacitance 400pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 83nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 66nC

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