SIHG460B MOSFET Transistor

The SIHG460B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHG460B transistor as follows.

SIHG460B Transistor Specification

Transistor Code		SIHG460B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247AC
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.25Ohm
Power Dissipation (Maximum)	PD	278W
Drain-Source Capacitance		152pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		31nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		85nC

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