SIHF520S MOSFET Transistor

The SIHF520S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHF520S transistor as follows.

SIHF520S Transistor Specification

Transistor Code		SIHF520S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.27Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		150pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		16nC

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