SIHB33N60E MOSFET Transistor

The SIHB33N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHB33N60E transistor as follows.

SIHB33N60E Transistor Specification

Transistor Code		SIHB33N60E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.099Ohm
Power Dissipation (Maximum)	PD	278W
Drain-Source Capacitance		156pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		100nC

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