SIA427ADJ MOSFET Transistor

The SIA427ADJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA427ADJ transistor as follows.

SIA427ADJ Transistor Specification

Transistor Code		SIA427ADJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-70-6L
Drain-Source Voltage (Maximum)	VDS	8V
Gate-Source Voltage (Maximum)	VGS	5V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	3.5W
Drain-Source Capacitance		735pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		0.8V
Total Gate Charge		33nC

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