SI7790DP MOSFET Transistor

The SI7790DP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7790DP transistor as follows.

SI7790DP Transistor Specification

Transistor Code		SI7790DP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWERPAK-SO-8
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	25.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	5.2W
Drain-Source Capacitance		475pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		34nS
Gate-Threshold Voltage (Maximum)		2.5V

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