SI5902BDC MOSFET Transistor

The SI5902BDC is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5902BDC transistor as follows.

SI5902BDC Transistor Specification

Transistor Code		SI5902BDC
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		1206-8
Transistor SMD Code		CE*
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.065Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		50pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		80nS
Gate-Threshold Voltage (Maximum)		3V

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