SI5475DC MOSFET Transistor

The SI5475DC is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5475DC transistor as follows.

SI5475DC Transistor Specification

Transistor Code		SI5475DC
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		1206-8
Transistor SMD Code		BF*
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.031Ohm
Power Dissipation (Maximum)	PD	1.3W
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		0.45V

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