SI4914BDY MOSFET Transistor

The SI4914BDY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4914BDY transistor as follows.

SI4914BDY Transistor Specification

Transistor Code		SI4914BDY
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.021Ohm
Power Dissipation (Maximum)	PD	1.7W
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		2.7V

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